Chung-Wen Lan Professor

Index
Chung-Wen Lan Professor
藍崇文 教授
phone:(02)3366-4190
fax:(02)2363-3917
email: cwlan@ntu.edu.tw
office:Dept.of Chemical Engineering 215
Lab Info

Crystal Growth Laboratory

Dept.of Chemical Engineering 工121C; 植研108
(02)3366-3033; (02)3366-3060
  • Education Background

DiplomaCh.E. National Taipei Institute of Technology 1982
M.S.Ch.E. National Taiwan University 1986
M.S.Mat.Sci. University of Wisconsin-Madison 1989
Ph.D.Mat.Sci. University of Wisconsin-Madison 1991

  • Research Topic

Silicon materials and Solar Photovoltaics
Research on silicon materials and their applications to photovoltaics, including silicon refining, crystal growth, characterizations, solar cell fabrication and evaluations. Current research projects include (1) Jointed industrial project on high-performance N-type silicon materials for solar cells; (2) Electric zone melting study of in-situ morphological observation, growth kinetics, defect formation, and phase field modeling.

  • Recent Research Topic

1. Key technology development for silicon casting using reusable Si3N4 crucibles recycled from kerf-loss silicon for photovoltaic industry
2. Development of key green technology for silicon and recirculated materials
3. Crystal growth, morphology and grain competition observation , and their phase field modeling of ribbon growth
4. Study of solar direct wafer processes

  • Honor

1. 2017 APVIA Award – Technological Achievement
2. 2017 Chair Professor of Zhuo-Zhang Zong Education Foundation
3. 2016 Laudise Prize from International Organization for Crystal Growth (IOCG)
4. 2016 TECO Award from TECO Technology Foundation
5. 2016 Silver Award of National Innovation Award
6. Best Presentation Award, The 26th International Photovoltaic Science and Engineering (PVSEC-26), Singapore 2016.
7. Plenary Speaker, The 25th International Photovoltaic Science and Engineering (PVSEC-25), Busan, Korea 2015 (also member of International Advisory Committee of PVSEC).
8. Conference co-chair, The 6th International Workshop on Crystal Growth technology, Jun. 14-20, 2014, Berlin, Germany
9. Conference Chair, The 23th International Photovoltaic Science and Engineering (PVSEC-23), 2013, Taipei (also member of International Advisory Committee of PVSEC).
10. The Best Poster, IUMRS-ICEM 2014
11. tenure Distinguished Professor, NTU (2013-)
12. Conference Chair, the 7th International Workshop on Modeling in Crystal Growth, Oct. 28-31, 2012, Taipei (Co-Chair of 4th International Workshop on Modeling in Crystal Growth, Fukuoka, Japan, Oct. 5-7, 2003) (also member of Advisory Committee of the International Conference in Crystal Growth (ICCG) 2013 in Warsaw, Poland and 2016 Nagoya, Japan).
13. The Best Poster, IWMCG7
14. Plenary Speaker, 2nd International Conference on Materials for Energy – EnMat II, May 12-16, 2013, Karlsruhe Germany.
15. Plenary Speaker, 27th European PV Solar Energy Conference and Exhibition – EUPVSEC, Development of High-Quality Multi-crystalline Silicon for PV, Sep. 24-28, 2012, Frankfurt, Germany.
16. 2011 Jin Kaiying Award from Taiwan Institute of Chemical Engineers
17. Associate Editor, Journal of Crystal Growth, (2011- now).
18. Guess Editor, Special Issue in High Efficiency Silicon Solar Cells for J. of Photoenergy (2011).
19. International Editor, Korean Journal of Crystal Growth, (2001-now)
20. 2010 Distinguished Engineering Professor Award from Chinese Institute of Engineers
21. Distinguished Professor, NTU (2007-2013)
22. Founder and Honorary Chairman of Taiwan Photovoltaic Industry Association (2010-now)
23. SEMI Taiwan, PV Committee, Vice Chairman (2008-2012)
24. Distinguished Principle Investigator Award, National Science Council (2008-2011)
25. Chairman of Taiwan Photovoltaic Industry Association (2007-2010)
26. General Director, Photovoltaic Technology Center, ITRI (2007-2010)
27. Associate Editor in Chief, J. ChIChE, (2000-2009).
28. 2008, 2009, 2010, 2011 Special Contribution Award, SEMI Taiwan
29. 2008 Prof. Lai Tsai-The Award from Taiwan Institute of Chemical Engineers
30. Editor, Fluid Dynamics and Materials Processing, 2005-2007.
31. National Science Council Outstanding Research Award (2004-2007).
32. Chairman of Asia Crystal Growth Science and Technology Association (2005-2007)

 

  1. C.W. Lan, A. Lan, C.F. Yang, H.P. Hsu, M. Yang, A. Yu, B. Hsu, C. Hsu, A. Yan, The emergence of high-performance multi-crystalline silicon in photovoltaics, J. Cryst. Growth (2016) in press (SCI, EI)
  2. C.F. Yang, M.G. Tsoutsouva, H.P. Hsu, C.W. Lan, Infrared measurement of undercooling during silicon solidification on bare and Si3N4 coated quartz substrates, J. Cryst. Growth 453 (2016) 130-137 (SCI,EI)
  3. Y. C. Wu, A. Lan, C. F. Yang, C. W. Hsu, C. M. Lu, A. Yang, and C. W. Lan, Effect of seed arrangements on the quality of n‑type monolike silicon grown by directional solidification, Cryst. Growth Des. 16 (2016) 6641−6647 (SCI, EI)
  4. C.W. Lan, A. Lan, C.F. Yang, H.P. Hsu, M. Yang, A. Yu, B. Hsu, W.C. Hsu, A. Yang, The emergence of high-performance multi-crystalline silicon in photovoltaics, J. Cryst. Growth 468 (2017) 17-23 (SCI, EI)
  5. C.Y. Lan, Y.C. Wu, A. Lan, C.F. Yang, C. Hsu, C.M. Lu, A. Yang, C.W. Lan, Control of ingot quality and solar cell appearance of cast mono-like silicon by using seed partitions, J. Cryst. Growth 475 (2017) 136-143 (SCI, EI)
  6. H.K. Lin, C.W. Lan, Phase field modeling of grain structure evolution during directional solidification of multi-crystalline silicon sheet, J. Cryst. Growth 475 (2017) 150-157 (SCI, EI)
  7. H.K. Lin, C.W. Lan, Revisiting the twinning mechanism in directional solidification of multi-crystalline silicon sheet, Acta Mater. 131 (2017) 1-10 (SCI, EI)
  8. G.Y. Chen, C.W. Lan, Understanding the facet formation mechanisms of Si thin-film solidification through three-dimensional phase-field modeling, J. Cryst. Growth 474 (2017) 166–170 (SCI, EI)
  9. S. P. Phang, H. C. Sio, C. F. Yang, C. W. Lan, Y. M. Yang, Andy W. H. Yu, Bruce S. L. Hsu, Chuck W. C. Hsu, and D. Macdonald, N-type high-performance multicrystalline and mono-like silicon wafers with lifetimes above 2 ms, Jpn. J. Appl. Phys. 56 08MB10
  10. H.K. Lin, C.W. Lan, A multilayer nucleation model for twinning during directional solidification of multi-crystalline silicon, J.Cryst. Growth 478 (2017) 47–51 (SCI, EI)
  11. T. Jain, H.K. Lin, C.W. Lan, Three dimensional modelling of grain boundary interaction and evolution during directional solidification of multi-crystalline silicon, J. Cryst. Growth 485 (2018) 8-18 (SCI, EI)
  12. T. Jain, H.K. Lin, C.W. Lan, Twinning mechanism at three-grain tri-junction during directional solidification of multi-crystalline silicon, Acta Mater. 144 (2018) 41-50 (SCI, EI)
  13. J. W. Jhang, T. Jain, H. K. Lin, and C. W. Lan, Possible twinning operations during directional solidification of multicrystalline silicon, Cryst. Growth Des. 18 (2018) 2518-2524 (SCI, EI)
  14. T-J. Liao, Y.S. Kang, C.W. Lan, In situ observation of crystal/melt interface and infrared measurement of temperature profile during directional solidification of silicon plate, J. Cryst. Growth, 499 (2018) 90-97 (SCI, EI)
  15. H.L. Yang, I.T. Liu, C.E. Liu, H.P. Hsu, C.W. Lan, Recycling and reuse of kerf-loss silicon from diamond wire sawing for photovoltaic industry, Waste Management, 84 (2019) 204-210 (SCI, EI)
  16. A. Lan, C.E. Liu, H.L. Yang, H.T. Yu, I.T. Liu, H.P. Hsu, C.W. Lan, Silicon ingot casting using reusable silicon nitride crucibles made from diamond wire sawing kerf-loss silicon, J. Cryst. Growth, 525 (2019) 125184 (SCI, EI)
  17. J.W. Jhang, C.W. Lan, Three-dimensional phase field modelling of twin nucleation during directional solidification of multi-crystalline silicon, J. Cryst. Growth, 520 (2019) 33–41 (SCI, EI)
  18. J.W. Jhang, G. Regula, G. Reinhart, N. Mangelinck-Noël, C.W. Lan, Heterogeneous twinning during directional solidification of multi-crystalline silicon, J. Cryst. Growth, 508 (2019) 42–49 (SCI, EI)
  19. C.E. Liu, W.C. Lan, H.T. Yu, H.L. Yang, I.T. Liu, H.P. Hsu, C.W. Lan, Making reusable reaction-bonded silicon nitride crucibles for silicon casting from kerf-loss silicon waste, Int J Appl Ceram Technol., 17 (2020) 146-152 (SCI)
  20. Victor Lau Jr., Kensaku Maeda, Kozo Fujiwara, Chung-wen Lan, In situ observation of the solidification interface and grain boundary development of two silicon seeds with simultaneous measurement of temperature profile and undercooling, , Journal of Crystal Growth, 532 (2020) 125428 (SCI, EI)