藍崇文 教授 / Chung-Wen Lan Professor

Index
藍崇文 教授
Chung-Wen Lan
電話(02)2363-3917
傳真(02)2363-3917
電子郵件 cwlan@ntu.edu.tw
辦公室:207A
研究室資料

光電晶體材料研究室

工121C; 植研108
(02)3366-3033; (02)3366-3060
  • 學經歷

台北工專五年制 化工文憑,1982
台灣大學 化工碩士,1986
美國威斯康辛大學 材料科學碩士,1989
美國威斯康辛大學 材料科學博士,1991

  • 研究主題

矽晶材料與太陽光電科技
研究主要在矽晶材料與其在太陽光電科技的應用,包含從材料的純化、長晶、評價與太陽能電池的製造與評價測試等。目前研究計畫包括:(1) N型高效多晶與類單晶的大產學合作畫;(2) 電區熔矽晶生長的界面型態觀察、生長動力學、缺陷生成與相場模擬。

  • 最新研究

1. 太陽能矽泥回收矽到製作可重複鑄矽錠的氮化矽坩堝的產業化關鍵技術開發。
2. 綠色矽回收與循環材料的關鍵技術開發。
3. 薄片矽晶生長、型態與晶粒競爭觀察、與相場模擬。
4. 太陽能直鑄晶片之研究。

  • 榮譽獎項

1. 2017年藍教授在台灣太陽光電產業協會的推薦下,也榮獲亞洲光伏協會兩年一評的『技術成就獎』。
2. 2017宗倬章講座教授。
3. 2016 ICCGE世界長晶學會最高榮譽Laudise Prize,IOCG每三年評獎一次,Laudise Prize是獎勵技術貢獻者。
4. 2016 第23屆東元獎。
5. 105年國家發明創作獎的發明銀牌獎。
6. Best Presentation Award, The 26th International Photovoltaic Science and Engineering (PVSEC-26), Singapore 2016.
7. Plenary Speaker, The 25th International Photovoltaic Science and Engineering (PVSEC-25), Busan, Korea 2015 (also member of International Advisory Committee of PVSEC).
8. Conference co-chair, The 6th International Workshop on Crystal Growth technology, Jun. 14-20, 2014, Berlin, Germany
9. Conference Chair, The 23th International Photovoltaic Science and Engineering (PVSEC-23), 2013, Taipei (also member of International Advisory Committee of PVSEC).
10. 指導學生楊家福同學參加 IUMRS-ICEM 2014 獲得最佳海報獎
11. 臺灣大學終身特聘教授 (2013-)
12. Conference Chair, the 7th International Workshop on Modeling in Crystal Growth, Oct. 28-31, 2012, Taipei (Co-Chair of 4th International Workshop on Modeling in Crystal Growth, Fukuoka, Japan, Oct. 5-7, 2003) (also member of Advisory Committee of the International Conference in Crystal Growth (ICCG) 2013 in Warsaw, Poland and 2016 Nagoya, Japan).
13. 指導學生林華愷同學參加 IWMCG7 獲得最佳海報獎
14. Plenary Speaker, 2nd International Conference on Materials for Energy – EnMat II, May 12-16, 2013, Karlsruhe Germany.
15. Plenary Speaker, 27th European PV Solar Energy Conference and Exhibition – EUPVSEC, Development of High-Quality Multi-crystalline Silicon for PV, Sep. 24-28, 2012, Frankfurt, Germany.
16. 2011台灣化學工程學會金開英獎
17. Associate Editor, Journal of Crystal Growth, (2011- now).
18. Guess Editor, Special Issue in High Efficiency Silicon Solar Cells for J. of Photoenergy (2011).
19. International Editor, Korean Journal of Crystal Growth, (2001-now)
20. 2010 中國工程師學會傑出工程教授獎
21. 臺灣大學特聘教授 (2007-2013)
22. 台灣太陽光電產業協會創會終身名譽理事長 (2010-now)
23. SEMI Taiwan, PV Committee, Vice Chairman (2008-2012)
24. 國科會傑出研究學者研究計畫主持人(2008-2011)
25. 台灣太陽光電產業協會第一任及第二任理事長 (2007-2010)
26. 工研院太陽光電中心主任(2007-2010)
27. Associate Editor in Chief, J. ChIChE, (2000-2009).
28. 2008, 2009, 2010, 2011台灣SEMI委員會貢獻獎
29. 2008台灣化學工程學會賴再得獎
30. Editor, Fluid Dynamics and Materials Processing, 2005-2007.
31. 國科會傑出研究獎, (2004-2007).
32. 亞洲晶體生長科學與技術協會第四任主席(2005-2007)

 

1. H.K. Lin, C.C. Chen, C.W. Lan, A simple anisotropic surface free energy function for three-dimensional phase field modeling of multi-crystalline crystal growth, J. Cryst. Growth, 362 (2013) 62-65. (SCI,EI)
2. S.H. Liu, C.C. Chen, C.W. Lan, Phase field modeling of crystal growth with nonlinear kinetics, J. Cryst. Growth, 362, (2013) 106–110 (SCI, EI)
3. H.W. Tsai, M.Yang, C.Chuck, C.W. Lan, Effect of crucible coating on the grain control of multi-crystalline silicon crystal growth, J. Cryst. Growth, 363, (2013) 242–246 (SCI, EI)
4. H.K. Lin, H.Y. Chen, C.W. Lan, Adaptive phase field modeling of morphological instability and facet formation during directional solidification of SiGe alloys, J. Cryst. Growth, 385, (2014) 44–48 (SCI, EI)
5. C.C. Chen, H.K. Lin, C.W. Lan, Phase field modeling with large interface thickness and undercooling, J. Cryst. Growth, 385, (2014) 121–126 (SCI,EI)
6. H.K. Lin, H.Y. Chen, C.W. Lan, Phase field modeling of facet formation during directional solidification of silicon film, J. Cryst. Growth, 385, (2014) 134–139 (SCI,EI)
7. Y.T. Wong, C.T. Hsieh, A. Lan, C. Hsu, C.W. Lan, The effect of silica nucleation layers on grain control of multi-crystalline silicon in directional solidification, J. Cryst. Growth, 404, (2014) 59–64 (SCI,EI)
8. H.P. Hsu, W.P. Huang, C.F. Yang, C.W. Lan, Silicon recovery from cutting slurry by phase transfer separation, Sep. Purif. Technol., 133, (2014) 1-7 (SCI,EI)
9. H.K. Lin, C.W. Lan, Three-dimensional phase field modeling of silicon thin-film growth during directional solidification: Facet formation and grain competition, J. Cryst. Growth, 401, (2014) 740–747 (SCI,EI)
10. C.C. Hsieh, A.Lan, C.Hsu, C.W. Lan, Improvement of multi-crystalline silicon ingot growth by using diffusion barriers, J. Cryst. Growth, 401, (2014) 727–731 (SCI,EI)
11. Y.T.Wong, C.Hsu, C.W.Lan, Development of grain structures of multi-crystalline silicon from randomly orientated seeds in directional solidification, J. Cryst. Growth, 387, (2014) 10–15 (SCI,EI)
12. Y.M.Yang, A.Yu, B.Hsu, W.C.Hsu, A.Yang, C.W.Lan, Development of high- performance multicrystalline silicon for photovoltaic industry, Prog. Photovoltaics, 23(3), 340-351 (2015)
13. C.F. Yang, H.P. Hsu, C.W. Lan, A rapid thermal process for silicon recycle and refining from cutting kerfloss slurry waste, Sep. Purif. Technol., 149,(2015) 38-46 (SCI,EI)
14. S.Y. Yeh and C.W. Lan, Adaptive phase-field modeling of anisotropic wetting with line tension at the triple junction, Langmuir, 31 (2015) 9348-9355 (SCI,EI)
15. C.C. Hsieh, Y.C.Wu, A.Lan, H.P.Hsu, C.Hsu, C.W.Lan, Comparison of defect formations in solar silicon growth from small random and large oriented seeds, J. Cryst. Growth, 419, (2015) 1–6 (SCI,EI)
16. M.C. Wu, C.F. Yang, C.W. Lan, Minority lifetime degradation of silicon wafers after electric zone melting, J. Cryst. Growth, 420, (2015) 74–79 (SCI,EI)
17. H.K. Lin, M.C. Wu, C.C. Chen, C.W. Lan, Evolution of grain structures during directional solidification of silicon wafers, J. Cryst. Growth, 439 (2016) 40-46 (SCI,EI)
18. C.W. Lan, Y.F. Yang, H.K. Lin, H.P. Hsu, B. Hsu, C. Hsu, Engineering silicon crystals for photovoltaics, CrystEngComm, invited highlight review, 18, (2016) 1474-1485 (SCI)
19. C.W. Lan, Y.M. Yang, A. Yu., W.C. Wu, B. Hsu, W.C. Hsu, A. Yang, Recent progress of crystal growth technology for multi-crystalline silicon solar ingot, Solid State Phenomen., 242, (2016) 21-29 (EI)
20. G.Y. Chen, H.K. Lin, C.W. Lan, Phase-field modeling of twin-related faceted dendrite growth of silicon, Acta Mater., 115 (2016) 324-332 (SCI, EI)
21. G.Y. Chen, C.W. Lan, On the growth orientation of twin-related faceted dendrites, Scripta Mater., 125 (2016) 54–57
22. G.Y. Chen, H.K. Lin, C.W. Lan, Understanding the facet formation mechanisms of Si thin-film solidification through three-dimensional phase-field modeling, J. Cryst. Growth (2016) in press (SCI, EI)
23. C.F. Yang, M.G. Tsoutsouva, H.P. Hsu, C.W. Lan, Infrared measurement of undercooling during silicon solidification on bare and Si3N4 coated quartz substrates, J. Cryst. Growth 453 (2016) 130-137 (SCI,EI)
24. Y. C. Wu, A. Lan, C. F. Yang, C. W. Hsu, C. M. Lu, A. Yang, and C. W. Lan, Effect of seed arrangements on the quality of n‑type monolike silicon grown by directional solidification, Cryst. Growth Des. 16 (2016) 6641−6647 (SCI, EI)
25. C.W. Lan, A. Lan, C.F. Yang, H.P. Hsu, M. Yang, A. Yu, B. Hsu, W.C. Hsu, A. Yang, The emergence of high-performance multi-crystalline silicon in photovoltaics, J. Cryst. Growth 468 (2017) 17-23 (SCI, EI)
26. C.Y. Lan, Y.C. Wu, A. Lan, C.F. Yang, C. Hsu, C.M. Lu, A. Yang, C.W. Lan, Control of ingot quality and solar cell appearance of cast mono-like silicon by using seed partitions, J. Cryst. Growth 475 (2017) 136-143 (SCI, EI)
27. H.K. Lin, C.W. Lan, Phase field modeling of grain structure evolution during directional solidification of multi-crystalline silicon sheet, J. Cryst. Growth 475 (2017) 150-157 (SCI, EI)
28. H.K. Lin, C.W. Lan, Revisiting the twinning mechanism in directional solidification of multi-crystalline silicon sheet, Acta Mater. 131 (2017) 1-10 (SCI, EI)
29. H.K. Lin, C.W. Lan, A multilayer nucleation model for twinning during directional solidification of multi-crystalline silicon, J. Cryst. Growth 478 (2017) 47-51 (SCI, EI)
30. T. Jain, H.K. Lin, C.W. Lan, Three dimensional modelling of grain boundary interaction and evolution during directional solidification of multi-crystalline silicon, J. Cryst. Growth 485 (2018) 8-18 (SCI, EI)
31. T. Jain, H.K. Lin, C.W. Lan, Twinning mechanism at three-grain tri-junction during directional solidification of multi-crystalline silicon, Acta Mater. 144 (2018) 41-50 (SCI, EI)